BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 7

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1995 Apr 25
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FET
Fig.12 Drain current as a function of gate 1 voltage
V
V
T
V
R
Fig.10 Drain current as a function of gate 1 current;
DS
G2-S
j
DS
G1
(mA)
(mA)
= 25 C.
I D
I D
= 9 to 12 V.
= 9 V; V
= 180 k
16
12
12
= 4 V.
8
4
0
8
4
0
0
0
(= V
typical values.
G2-S
connected to V
GG
= 4 V.
); typical values; see Fig.26.
2
20
4
GG
); T
40
j
= 25 C.
6
60
8
I
G1
V
GG
MLD163
MLD165
( A)
(V)
80
10
7
handbook, halfpage
handbook, halfpage
V
R
T
V
R
Fig.13 Drain current as a function of gate 1 voltage
j
G2-S
Fig.11 Drain current as a function of gate 1 supply
DS
G1
(mA)
G1
(mA)
= 25 C.
I D
I D
connected to V
= 12 V; V
= 250 k (connected to V
12
20
15
10
= 4 V.
8
4
0
5
0
0
0
(= V
voltage (= V
typical values; see Fig.26.
G2-S
GG
= 4 V.
GG
); typical values; see Fig.26.
4
.
4
GG
R
GG
G1
) and drain supply voltage;
); T
8
= 100 k
j
= 25 C.
V
GG
8
Product specification
= V
BF1100WR
12
V
GG
DS
511 k
147 k
180 k
205 k
249 k
301 k
402 k
(V)
MLD166
(V)
MLD164
12
16