N25Q128 Numonyx, N25Q128 Datasheet - Page 129

no-image

N25Q128

Manufacturer Part Number
N25Q128
Description
128-mbit 3 V, Multiple I/o, 4-kbyte Subsector Erase On Boot Sectors, Xip Enabled, Serial Flash Memory With 108 Mhz Spi Bus Interface
Manufacturer
Numonyx
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N25Q128A11B1240F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
N25Q128A11B1241F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
N25Q128A11BSF40F
Manufacturer:
MICRON
Quantity:
1 200
Part Number:
N25Q128A11BSF40G
Manufacturer:
LT
Quantity:
726
Part Number:
N25Q128A11E1240E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
N25Q128A11E1240E
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
N25Q128A11E1241E
Manufacturer:
ST
0
Part Number:
N25Q128A11E1241E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
N25Q128A11EF740E
Manufacturer:
SAMSUNG
Quantity:
560
Part Number:
N25Q128A11EF740F
Manufacturer:
TI
Quantity:
101
Part Number:
N25Q128A11EF840E
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
N25Q128A11EF840E
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
N25Q128A11ESE40F
Manufacturer:
ST
0
Part Number:
N25Q128A11ESE40F
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
N25Q128A11ESE40G
Manufacturer:
MIRON
Quantity:
20 000
Part Number:
N25Q128A11ESE40G
0
N25Q128 - 3 V
Instructions
Figure 67. Write Volatile Enhanced Configuration Register instruction sequence
DIO-SPI
S
0
1
2
3
4
5
6
7
8
9 10 11
C
Volatile Enhanced
Configuration Register In
Byte
Byte
Instruction
6
4
2
0
6
4
2
0
DQ0
7
5
3
1
7
5
3
1
DQ1
Dual_Write_VECR
9.3
QIO-SPI Instructions
In QIO-SPI protocol, instructions, addresses and Input/Output data always run in parallel on
four wires: DQ0, DQ1, DQ2 and DQ3 with the already mentioned exception of the modify
instruction (erase and program) performed with the VPP=VPPh.
In the case of a Quad Command Fast Read (QCFR), Read OTP (ROTP), Read Lock
Registers (RDLR), Read Status Register (RDSR), Read Flag Status Register (RFSR), Read
NV Configuration Register (RDNVCR), Read Volatile Configuration Register (RDVCR),
Read Volatile Enhanced Configuration Register (RDVECR) and Read Identification (RDID)
instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip
Select (S) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Quad Command Page Program (QCPP), Program OTP (POTP), Subsector
Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Program/Erase Suspend (PES),
Program/Erase Resume (PER), Write Status Register (WRSR), Clear Flag Status Register
(CLFSR), Write to Lock Register (WRLR), Write Configuration Register (WRVCR), Write
Enhanced Configuration Register (WRVECR), Write NV Configuration Register (WRNVCR),
Write Enable (WREN) or Write Disable (WRDI) instruction, Chip Select (S) must be driven
High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed.
All attempts to access the memory array during a Write Status Register cycle, a Write Non
Volatile Configuration Register, a Program cycle or an Erase cycle are ignored, and the
internal Write Status Register cycle, Write Non Volatile Configuration Register, Program
cycle or Erase cycle continues unaffected, the only exception is the Program/Erase
Suspend instruction (PES), that can be used to pause all the program and the erase cycles
but the Program OTP (POT),, Bulk Erase (BE) and Write Non Volatile Configuration
Register. The suspended program or erase cycle can be resumed by mean of the
Program/Erase Resume instruction (PER). During the program/erase cycles also the polling
instructions (to check if the internal modify cycle is finished by mean of the WIP bit of the
129/180

Related parts for N25Q128