FDMS3624S Fairchild Semiconductor, FDMS3624S Datasheet - Page 8

• Manufacturer Part Number: FDMS3624S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3624S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
10
8
6
4
2
0
0.01
100
200
100
0.1
10
0
10
Figure 20. Gate Charge Characteristics
0.001
1
1
0.01
I
D
= 30 A
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
Figure 24. Forward Bias Safe
JA
= MAX RATED
= 25
10
0.01
= 120
V
o
Switching Capability
C
DS
t
Q
o
0.1
AV
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
DS
g
20
T
, TIME IN AVALANCHE (ms)
, GATE CHARGE (nC)
J
(
on
0.1
= 125
V
)
DD
= 10 V
o
30
C
V
DD
T
1
1
J
= 25
= 15 V
40
V
o
C
DD
10
T
= 13 V
J
= 100
10
50
100
o
C
DC
100
1 ms
10 ms
100 ms
1s
10s
60
μ
1000
s
100
8
T
J
= 25°C unless otherwise noted
10000
1000
3000
1000
100
100
0.5
Figure 23. Maximum Continuous Drain
10
10
150
120
Figure 25. Single Pulse Maximum Power
1
10
90
60
30
0.1
0
-4
25
f = 1 MHz
V
GS
Figure 21. Capacitance vs Drain
Limited by Package
Current vs Case Temperature
10
R
= 0 V
θ
JC
-3
V
= 2.2
DS
50
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
10
t, PULSE WIDTH (sec)
T
o
C
-2
C/W
,
Dissipation
CASE TEMPERATURE (
V
GS
10
1
75
-1
= 4.5 V
V
1
GS
100
= 10 V
SINGLE PULSE
R
θ
10
JA
= 120
o
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C )
10
125
100
C
C
C
o
oss
C/W
rss
iss
1000
30
150