FDMS3624S Fairchild Semiconductor, FDMS3624S Datasheet - Page 7

• Manufacturer Part Number: FDMS3624S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3624S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
120
100
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
0.0
-75
Figure 14. On-Region Characteristics
1.0
Figure 16. Normalized On-Resistance
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
-50
D
GS
= 30 A
= 5 V
vs Junction Temperature
= 10 V
V
0.3
T
DS
V
V
V
-25
J
GS
GS
GS
,
T
V
,
1.5
JUNCTION TEMPERATURE (
J
GS
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
= 4.5 V
= 2.5 V
= 125
GS
= 10 V
0
= 3 V
0.6
o
V
C
GS
25
μ
= 3.5 V
s
2.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
0.9
T
75
J
= -55
T
J
2.5
o
100 125 150
= 25
C )
1.2
o
C
o
C
μ
s
1.5
3.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
200
100
0.1
10
4
3
2
1
0
7
6
5
4
3
2
1
0
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
Current and Gate Voltage
= 0 V
V
20
T
SD
J
V
0.2
V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
GS
GS
Source Voltage
I
D
4
= 2.5 V
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
40
C
0.4
T
J
μ
= -55
s
60
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
o
J
C
V
= 25
0.6
V
GS
GS
= 3 V
80
o
= 4.5 V V
C
8
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T
0.8
V
T
100
J
GS
I
J
D
GS
= 125
= 25
= 30 A
= 3.5 V
= 10 V
o
μ
o
C
s
C
120
1.0
10