FDMS3624S Fairchild Semiconductor, FDMS3624S Datasheet - Page 5

• Manufacturer Part Number: FDMS3624S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3624S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
50
10
100
0.001
0.1
10
1
10
Figure 7.
8
6
4
2
0
1
0.01
0
I
T
Figure 9.
SINGLE PULSE
T
R
D
J
A
Figure 11. Forward Bias Safe
θ
= 17.5 A
JA
= MAX RATED
THIS AREA IS
LIMITED BY r
= 25
= 125
4
0.01
Switching Capability
o
V
C
Gate Charge Characteristics
DS
t
AV
0.1
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Unclamped Inductive
8
Q
DS
g
, GATE CHARGE (nC)
(
on
T
0.1
)
J
V
12
= 125
DD
1
= 10 V
o
T
C
J
16
= 25
V
1
DD
o
C
T
= 13 V
10
20
J
V
= 100
DD
= 15 V
10
o
10 ms
100 ms
100
1 ms
1s
10s
DC
24
C
μ
100200
s
50
28
T
J
5
= 25°C unless otherwise noted
2000
1000
1000
100
Figure 10.
100
80
70
60
50
40
30
20
10
10
0.5
10
0
1
10
0.1
25
Figure 12.
-4
Limited by Package
Figure 8.
R
f = 1 MHz
V
Current vs Case Temperature
θ
GS
JC
10
= 0 V
= 3.0
-3
V
50
Maximum Continuous Drain
DS
Power Dissipation
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
Single Pulse Maximum
Capacitance vs Drain
C
10
t, PULSE WIDTH (sec)
,
V
CASE TEMPERATURE (
GS
-2
= 4.5 V
75
1
10
-1
V
100
1
GS
= 10 V
SINGLE PULSE
R
10
o
θ
C )
JA
125
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= 125
10
C
C
100
C
rss
oss
iss
o
C/W
1000
150
30