FDMS86250 Fairchild Semiconductor, FDMS86250 Datasheet - Page 4

• Manufacturer Part Number: FDMS86250
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Typical Characteristics
0.001
0.01
100
0.1
10
30
10
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.1
0
THIS AREA IS
LIMITED BY r
Figure 9.
Figure 11.
I
D
= 6.7 A
4
V
Switching Capability
DS
Gate Charge Characteristics
t
0.1
SINGLE PULSE
T
R
T
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
J
A
θ
DS(on)
1
, TIME IN AVALANCHE (ms)
JA
8
= MAX RATED
Q
= 25
g
= 125
, GATE CHARGE (nC)
Forward Bias Safe
o
C
V
T
12
J
DD
o
= 125
C/W
= 50 V
T
J
1
= 25
10
o
16
C
T
V
DD
J
o
C
T
= 25 °C unless otherwise noted
=75 V
J
= 100
20
10
V
o
DD
C
100
= 100 V
24
100 ms
10 ms
1 ms
1 s
10 s
DC
100
500
28
4
5000
1000
1000
100
100
0.5
50
40
30
20
10
10
Figure 10.
10
0
1
0.1
1
10
25
Figure 12. Single Pulse Maximum
f = 1 MHz
V
-3
Limited by Package
Figure 8.
GS
Current vs Case Temperature
= 0 V
10
V
50
-2
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
V
, DRAIN TO SOURCE VOLTAGE (V)
T
GS
C
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
= 6 V
CASE TEMPERATURE (
10
1
-1
75
V
GS
1
= 10 V
100
10
10
SINGLE PULSE
R
T
R
A
θ
o
θ
JA
C )
JC
= 25
125
= 125
= 1.3
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100
C
C
C
o
C
oss
iss
rss
o
o
C/W
C/W
100
1000
150