FDMC8010 Fairchild Semiconductor, FDMC8010 Datasheet

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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8010 FDMC8010 ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.C ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = Semiconductor’s advanced PowerTrench = 25 A been especially tailored to minimize the on-state resistance. This ...

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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ° 153 mJ is based on starting ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C ...

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... DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev 25°C unless otherwise noted J PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 0.4 0 100 125 150 - 2.5 3 ...

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... MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev 25°C unless otherwise noted J 10000 = 1000 100 ...

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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

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... Dimensional Outline and Pad Layout   ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.C 6 www.fairchildsemi.com ...

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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...