FDMS86250 Fairchild Semiconductor, FDMS86250 Datasheet - Page 3

• Manufacturer Part Number: FDMS86250
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Typical Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
30
20
10
50
40
30
20
10
Figure 3. Normalized On- Resistance
0
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
2
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
vs Junction Temperature
= 6.7 A
= 5 V
V
= 10 V
DS
T
V
1
, DRAIN TO SOURCE VOLTAGE (V)
-25
On-Region Characteristics
J
GS
,
3
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
V
V
GS
GS
0
= 10 V
= 6 V
T
J
2
= 25
25
T
J
μ
s
= 150
o
4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
50
T
J
o
3
C
= 25 °C unless otherwise noted
75
5
o
100 125 150
T
C )
V
J
V
4
V
GS
= -55
GS
GS
= 4.5 V
= 5.5 V
= 5 V
o
C
μ
s
5
6
3
0.001
0.01
100
0.1
80
60
40
20
10
4
3
2
1
0
Figure 2.
Figure 4.
0
1
Forward Voltage vs Source Current
0.0
0
vs Drain Current and Gate Voltage
4
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
V
GS
= 0 V
SD
T
0.2
5
J
, BODY DIODE FORWARD VOLTAGE (V)
= 4.5 V
10
Normalized On-Resistance
V
= 150
On-Resistance vs Gate to
GS
I
Source Voltage
I
D
D
Source to Drain Diode
,
,
= 6.7 A
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
0.4
C
6
T
T
20
V
J
J
GS
= 25
= 125
= 5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
μ
o
7
s
C
o
C
30
V
GS
T
0.8
= 5.5 V
J
8
= -55
T
J
= 25
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o
40
V
C
1.0
o
V
GS
9
C
GS
= 10 V
μ
= 6 V
s
1.2
50
10