FDMS86250 Fairchild Semiconductor, FDMS86250 Datasheet - Page 2

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FDMS86250

Manufacturer Part Number
FDMS86250
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 1 mH, I
AS
= 19 A, V
Parameter
DD
= 135 V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
GS
a. 50 °C/W when mounted on a
1 in
= 10 V.
2
pad of 2 oz copper.
V
V
I
V
V
V
V
V
f = 1 MHz
I
I
V
V
V
I
V
V
V
V
F
D
D
D
GS
GS
DD
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
DS
= 6.7 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 0 V, I
= 0 V, I
= 75 V, V
= 75 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 120 V, V
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
DS
2
Test Conditions
, I
S
S
D
D
D
D
= 2 A
= 6.7 A
D
D
= 5.8 A
GS
GEN
= 250 μA
GS
= 6.7 A,
= 6.7 A
= 6.7 A
= 6.7 A, T
GS
DS
= 0 V,
= 0 V
= 0 V
= 6 Ω
= 0 V
V
I
D
DD
= 6.7 A
= 75 V,
J
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
2.0
Min
150
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
1750
0.72
0.78
165
112
8.8
0.5
2.9
-11
4.3
4.2
7.4
5.5
73
Typ
106
19
23
35
24
14
22
25
14
2330
±100
220
117
180
Max
1.2
1.3
4.0
θCA
15
25
33
46
25
10
35
10
36
20
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
μA
nA
Ω
ns
ns
ns
V
V
S
V

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