PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet - Page 9

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN1R5-25YL

Manufacturer Part Number
PSMN1R5-25YL
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN1R5-25YL
Manufacturer:
NXP
Quantity:
30 000
Part Number:
PSMN1R5-25YL
Manufacturer:
NXP/恩智浦
Quantity:
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NXP Semiconductors
PSMN1R5-25YL_1
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
100
I
S
80
60
40
20
0
0
0.2
Rev. 01 — 16 June 2009
T
0.4
j
= 150 °C
0.6
0.8
25 °C
003aac905
V
SD
N-channel TrenchMOS logic level FET
(V)
1
PSMN1R5-25YL
© NXP B.V. 2009. All rights reserved.
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