PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet - Page 8

• Manufacturer Part Number: PSMN1R5-25YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R5-25YL_1
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
1.5
0.5
GS
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
V
0
DS
= 12 V
40
60
V
DS
Q
= 19 V
120
G
(nC)
03aa27
003aac904
T
j
( ° C)
180
80
Rev. 01 — 16 June 2009
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
6000
4000
2000
(pF)
C
0
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
GS1
1
I
Q
PSMN1R5-25YL
D
C
C
C
GS
iss
oss
rss
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aaa508
003aac906
(V)
10
2
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