PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet - Page 4

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN1R5-25YL

Manufacturer Part Number
PSMN1R5-25YL
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PSMN1R5-25YL
Manufacturer:
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Quantity:
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Part Number:
PSMN1R5-25YL
Manufacturer:
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NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R5-25YL_1
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
10
10
10
th(j-mb)
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.1
0.2
0.05
0.02
single shot
Parameter
thermal resistance from
junction to mounting
base
10
-5
Conditions
see
Figure 4
10
-4
Rev. 01 — 16 June 2009
10
-3
10
N-channel TrenchMOS logic level FET
-2
PSMN1R5-25YL
Min
-
P
10
-1
t
Typ
0.5
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
003aac456
Max
1.1
T
t
p
t
1
Unit
K/W
4 of 13

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