ATtiny43U Atmel Corporation, ATtiny43U Datasheet - Page 145
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ATtiny43U
Manufacturer Part Number
ATtiny43U
Description
Manufacturer
Atmel Corporation
Specifications of ATtiny43U
Flash (kbytes)
4 Kbytes
Pin Count
20
Max. Operating Frequency
8 MHz
Cpu
8-bit AVR
# Of Touch Channels
8
Hardware Qtouch Acquisition
No
Max I/o Pins
16
Ext Interrupts
16
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
0.25
Eeprom (bytes)
64
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
0.7 to 5.5
Operating Voltage (vcc)
0.7 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
2
Output Compare Channels
4
Pwm Channels
4
32khz Rtc
No
Calibrated Rc Oscillator
Yes
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19.6.3
19.6.4
8048B–AVR–03/09
Chip Erase
Programming the Flash
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
B. Load Address Low byte
C. Load Data Low Byte
D. Load Data High Byte
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give CLKI a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give CLKI a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 - 0xFF).
4. Give CLKI a positive pulse. This loads the address low byte.
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte (0x00 - 0xFF).
3. Give CLKI a positive pulse. This loads the data byte.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Table 19-8 on page
(1)
memories plus Lock bits. The Lock bits are
142. When programming the Flash,
145
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