KM29W040AT Samsung Semiconductor, KM29W040AT Datasheet - Page 3

• Manufacturer Part Number: KM29W040AT
• Manufacturer: Samsung Semiconductor

Specifications of KM29W040AT

• Cell Type: NAND
• Density: 4Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-II
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

KM29W040AT, KM29W040AIT
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
4M : 4K Row
(=128 Blocks)
NOTE : *(1) : X can be V
2nd Cycle
3rd Cycle
1st Cycle
CE
RE
WE
Command
I/O
A
A
A
A
A
16
0
8
7
0
0
- A
1
- A
128Byte Column
IL
18
6
or V
I/O
The 1st Block (4KB)
A
A
A
17
Frame Register
IH
1
9
32 Byte
1
2
& High Voltage
CLE ALE WP
Control Logic
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
I/O
A
A
Register
A
10
18
2
2
3
I/O
X*
A
A
11
3
(1)
3
4
I/O
A
A
X*
12
4
4
3
I/O
I/O
A
A
X*
0
13
5
~ I/O
5
32Byte x 4frame x 4096row
7
8 bit
NAND Flash ARRAY
I/O Buffers & Latches
Page Register & S/A
I/O
A
A
*X
14
Global Buffers
6
6
Good Block
1Block(32Row)
(4K Byte)
1 Frame = 32 Byte
1 Row
1 Device = 32B x 4frames x 32rows x 128blocks
Y-Gating
4M Bit
I/O
1 Block = 32 rows = 4K Bytes
A
A
*X
15
7
7
= 4 Frames = 128 Bytes
= 4Mbits
Column Address (A
Frame Address (A
Row Address (A
Block Address (A
FLASH MEMORY
I/O
I/O
0
7
7
-A
12
5
-A
11
-A
0
-A
6
)
18
)
4
)
)