KM29W040AT Samsung Semiconductor, KM29W040AT Datasheet - Page 21

• Manufacturer Part Number: KM29W040AT
• Manufacturer: Samsung Semiconductor

Specifications of KM29W040AT

• Cell Type: NAND
• Density: 4Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-II
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

DATA PROTECTTION
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address input of
00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (A4H). The command register remains
in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down as shown in Figure 8. The two step command sequence for program/erase provides additional
software protection.
Figure 8. AC Waveforms for Power Transition
KM29W040AT, KM29W040AIT
Figure 9. Read ID Operation
CLE
CE
WE
ALE
RE
I/O
V
WP
CC
0
~
7
90H
~ 2.5V
Add. Input(1Cycle)
A
0
~A
7
:"0"
High
t
WHRID
t
AR
t
CR
21
t
REA
Dout(ECH)
Maker code
FLASH MEMORY
Device code
Dout(
~ 2.5V
A4H
)
IL