KM29W040AT Samsung Semiconductor, KM29W040AT Datasheet - Page 10

• Manufacturer Part Number: KM29W040AT
• Manufacturer: Samsung Semiconductor

Specifications of KM29W040AT

• Cell Type: NAND
• Density: 4Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-II
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

When the error occurs after an erase operation, prevent future accesses to this bad block
(again by creating a table within the system or other appropriate scheme.)
Block Replacement
During Program operation ;
During Erase operation ;
Error in program or erase operation
The device may fail during a program or erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
KM29W040AT, KM29W040AIT
KM29W040A Technical Notes(Continued)
Block
Frame
Single Bit
Buffer
memory
error occurs
Failure Mode
Erase Failure
Program Failure
Program Failure
("1" --> "0")
Block A
Block B
10
Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Block Verify after Program --> Block Replacement
When the error happens in Block "A", try to reprogram the
data into another Block "B" by reloading from an external
buffer. Then, prevent further system access to Block
"A"(by creating a "bad block" table or other appropriate
scheme.)
Detection and Countermeasure sequence
FLASH MEMORY