PSMN1R5-40ES,127 NXP Semiconductors, PSMN1R5-40ES,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R5-40ES,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065161127

NXP Semiconductors
PSMN1R5-40ES
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
40
= 8V
20V
80
(A)
I
S
75
60
45
30
15
120
0
0
32V
All information provided in this document is subject to legal disclaimers.
Q
003aaf323
G
(nC)
160
T
0.25
j
Rev. 01 — 19 April 2011
= 175 ° C
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
0.5
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
10
0.75
5
4
3
2
10
as a function of drain-source voltage; typical
values
T
j
-1
= 25 ° C
003aaf325
V
SD
(V)
1
1
PSMN1R5-40ES
10
© NXP B.V. 2011. All rights reserved.
V
DS
003aaf324
C
C
C
oss
iss
rss
(V)
10
2
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