PSMN1R5-40ES,127 NXP Semiconductors, PSMN1R5-40ES,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R5-40ES,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065161127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R5-40ES
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
single shot
0.05
0.02
0.2
0.1
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 01 — 19 April 2011
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Conditions
see
Vertical in free air
10
-3
Figure 4
10
-2
PSMN1R5-40ES
Min
-
-
10
P
-1
Typ
0.22
60
tp
T
t
© NXP B.V. 2011. All rights reserved.
p
(s)
003aaf327
δ =
Max
0.44
-
tp
T
t
1
Unit
K/W
K/W
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