PSMN1R5-40ES,127 NXP Semiconductors, PSMN1R5-40ES,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN1R5-40ES,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065161127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN1R5-40ES
Product data sheet
Pin
1
2
3
mb
Type number
PSMN1R5-40ES
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
drain
Package
Name
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
t
p
j
j
mb
mb
GS
GS
GS
sup
= 0.1 ms
Rev. 01 — 19 April 2011
≥ 25 °C; T
≥ 25 °C; T
Simplified outline
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 40 V; unclamped; R
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
p
p
SOT226 (I2PAK)
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
1
= 100 °C
= 25 °C; see
mb
Figure 2
2
= 25 °C; I
mb
mb
3
= 25 °C; see
= 25 °C
GS
GS
D
= 20 kΩ
= 120 A;
= 50 Ω;
Figure 1
Graphic symbol
Figure 3
PSMN1R5-40ES
[1]
[1]
[1]
mbb076
G
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
SOT226
175
175
260
Version
Max
40
40
20
120
120
1301
338
120
1301
1.4
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
J
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