MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 76

• Manufacturer Part Number: MT46H32M16LFCK-10
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFCK-10

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 45:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
COMMAND
Case 1:
Case 2:
BA0, BA1
A11, A12
A0–A9
t
DQS
DQ
t
DQS
DQ
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
Bank Read – With Auto Precharge
5
1
1
t
t
IS
IS
NOP
T0
Notes: 1. D
t
DQSCK (MIN)
t
t
DQSCK (MAX)
6
IH
t
IH
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. “Don’t Care” if A10 is HIGH at T5.
5. PRE = PRECHARGE, ACT = ACTIVE, RA = Row address, BA = Bank address.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7. Refer to Figure 36 on page 67 and Figure 37 on page 68 for detailed DQS and DQ timing.
Bank x
t
t
IS
IS
ACT
T1
RA
RA
RA
times.
OUT
t
t
IH
IH
t
CK
n = data-out from column n.
t
t
RAS
RCD
t
RC
NOP
T2
6
t
CH
t
CL
t
3
Bank x
READ
IS
Col n
T3
t
t
2
LZ (MAX)
IH
t
LZ (MIN)
76
CL = 2
CL = 2
NOP
T4
t
t
AC(MIN)
6
RPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RPRE
512Mb: x16, x32 Mobile DDR SDRAM
t
AC (MAX)
D
OUT
n
NOP
T5
D
t
OUT
n
DQSCK (MAX)
6
t
DQSCK (MIN)
D
n + 1
OUT
T5n
D
n + 1
OUT
t
RP
D
n + 2
OUT
NOP
T6
D
n + 2
t
OUT
HZ (MIN)
t
6
RPST
D
n + 3
OUT
T6n
D
n + 3
t
OUT
RPST
©2005 Micron Technology, Inc. All rights reserved.
t
HZ (MAX)
NOP
T7
Timing Diagrams
TRANSITIONING DATA
DON’T CARE
6
Bank x
ACT
T8
RA
RA
RA
Advance