MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 38

• Manufacturer Part Number: MT46H32M16LFCK-10
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFCK-10

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 21:
Figure 22:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
WRITE Burst
Consecutive WRITE-to-WRITE
Notes: 1. D
Notes: 1. D
t
DQSS (NOM)
2. An uninterrupted burst of 4 is shown.
3. A10 is LOW with the WRITE command (auto precharge is disabled).
2. An uninterrupted burst of 4 is shown.
3. Each W RITE command may be to any bank.
COMMAND
COMMAND
t
t
t
ADDRESS
ADDRESS
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
IN
IN
DQS
DQS
DQS
CK#
DQS
DM
DM
DM
DQ
DQ
DQ
CK#
DM
DQ
CK
CK
b = data-in for column b.
b (n) = data-in for column b (n).
Bank a,
WRITE
WRITE
Bank,
Col b
Col b
T0
T0
t
t
DQSS
DQSS
t
t
DQSS
DQSS
D
b
IN
NOP
D
NOP
T1
T1
b
IN
38
b+1
D
D
DON’T CARE
b
IN
IN
T1n
b+1
D
IN
b+2
D
b+1
D
IN
IN
WRITE
Bank,
Col n
T2
b+2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
NOP
T2
IN
512Mb: x16, x32 Mobile DDR SDRAM
b+3
D
b+2
D
IN
IN
T2n
b+3
T2n
D
TRANSITIONING DATA
IN
b+3
D
IN
T3
NOP
D
T3
NOP
n
IN
DON’T CARE
T3n
n+1
D
IN
©2005 Micron Technology, Inc. All rights reserved.
n+2
T4
NOP
D
IN
TRANSITIONING DATA
T4n
n+3
D
IN
Operations
T5
NOP
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