MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 30

• Manufacturer Part Number: MT46H32M16LFCK-10
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFCK-10

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 14:
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
Consecutive READ Bursts
Notes: 1. D
COMMAND
COMMAND
COMMAND
2. BL = 4, 8, 16, or continuous page (if 4, the bursts are concatenated; if 8, 16, or continuous
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
ADDRESS
ADDRESS
ADDRESS
page, the second burst interrupts the first).
DQS
DQS
OUT
CK#
CK#
DQ
DQ
CK
CK
n (or b) = data-out from column n (or column b).
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
CL = 2
t
AC,
NOP
NOP
T1
T1
t
DQSCK, and
30
CL = 3
T1n
D
READ
Bank,
READ
Bank,
OUT
Col b
Col b
n
T2
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x16, x32 Mobile DDR SDRAM
t
DQSQ.
D
n + 1
T2n
T2n
OUT
D
D
n + 2
OUT
n
NOP
NOP
T3
T3
OUT
DON’T CARE
D
n + 1
T3n
D
n + 3
T3n
OUT
OUT
D
n + 2
OUT
D
T4
NOP
T4
NOP
©2005 Micron Technology, Inc. All rights reserved.
OUT
b
TRANSITIONING DATA
D
n + 3
T4n
T4n
OUT
D
b + 1
OUT
D
Operations
T5
NOP
T5
NOP
D
b + 2
OUT
b
OUT
T5n
T5n
D
b + 1
Advance
D
b + 3
OUT
OUT