MT46H32M16LFCK-10 Micron Technology Inc, MT46H32M16LFCK-10 Datasheet - Page 48

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MT46H32M16LFCK-10

Manufacturer Part Number
MT46H32M16LFCK-10
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H32M16LFCK-10

Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H32M16LFCK-10 L
Manufacturer:
MICRON
Quantity:
4 000
Figure 33:
Deep Power-Down (DPD)
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_2..fm - Rev. F 09/05 EN
COMMAND
Power-Down in Active or Precharge Modes
CKE
CK#
CK
No READ/WRITE
access in progress
Notes: 1. Clock must toggle a minimum of one time during this time.
VALID
T0
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power of the memory array. Data will not be retained once the device
enters deep power-down mode.
Before entering DPD mode the DRAM must be in all banks idle state with no activity on
the data bus (
with RAS# and CAS# HIGH at the rising edge of the clock, while CKE is LOW. CKE must
be held LOW to maintain DPD mode. The clock must be stable prior to exiting DPD
mode. This mode is exited by asserting CKE HIGH with either a NOP or DESELECT com-
mand present on the command bus. Upon exiting DPD mode, 200µs of valid clocks with
either NOPs or DESLECT commands present on the command bus are required, a PRE-
CHARGE ALL command and a full DRAM initialization sequence is required.
t
IS
NOP
T1
Enter
(active or precharge) power-down mode
t
RP time must be met). This mode is entered by holding CS# and WE# LOW
T2
(
t
(
(
(
)
(
)
)
)
)
CKE
(
(
(
(
)
)
(
)
)
)
48
Ta0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x16, x32 Mobile DDR SDRAM
Ta1
NOP
Exit
(active or precharge) power-down mode
Deep Power-Down (DPD)
t
Ta2
NOP
XP
1
(
(
)
)
©2005 Micron Technology, Inc. All rights reserved.
(
)
(
)
DON’T CARE
VALID
Ta3
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