ADF4153BRUZ Analog Devices Inc, ADF4153BRUZ Datasheet - Page 8

• Manufacturer Part Number: ADF4153BRUZ
• Description: IC SYNTH PLL RF F-N FREQ 16TSSOP
• Manufacturer: Analog Devices Inc
• Type: Fractional N Synthesizer (RF)r

Specifications of ADF4153BRUZ

• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: Yes/No
• Frequency - Max: 4GHz
• Divider/multiplier: No/Yes
• Voltage - Supply: 2.7 V ~ 3.3 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 4GHz
• Pll Type: Frequency Synthesis
• Frequency: 4GHz
• Supply Current: 20mA
• Supply Voltage Range: 2.7V To 3.3V
• Digital Ic Case Style: TSSOP
• No. Of Pins: 16
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: EVAL-ADF4153EBZ1 - BOARD EVAL FOR ADF4153
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ADF4153
TYPICAL PERFORMANCE CHARACTERISTICS
Loop bandwidth = 20 kHz, reference = 250 MHz, VCO = Sirenza 1750T VCO, evaluation board = EVAL-ADF4153EBZ1, measurements taken
on the Agilent E5500 phase noise system.
Figure 6. Single-Sideband Phase Noise Plot (Low Noise and Spur Mode)
Figure 5. Single-Sideband Phase Noise Plot (Lowest Noise Mode)
–100
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–130
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–160
–170
–100
–120
–130
–140
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–170
–100
–120
–130
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–150
–160
–170
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–110
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–90
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–40
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–60
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–30
–40
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–80
–90
Figure 7. Single-Sideband Phase Noise Plot (Low Spur Mode)
1k
1k
1k
20kHz LOOP BW, LOWEST NOISE MODE
RF = 1.7202MHz, PFD = 25MHz, N = 68,
FRAC = 101, MOD = 125, I
INTEGRATED PHASE ERROR = 0.23° RMS
SIRENZA 1750T VCO
20kHz LOOP BW, LOW SPUR MODE
RF = 1.7202MHz, PFD = 25MHz, N = 68,
FRAC = 101, MOD = 125, I
INTEGRATED PHASE ERROR = 0.36° RMS
SIRENZA 1750T VCO
20kHz LOOP BW, LOW NOISE AND SPUR MODE
RF = 1.7202MHz, PFD = 25MHz, N = 68,
FRAC = 101, MOD = 125, I
INTEGRATED PHASE ERROR = 0.33° RMS
SIRENZA 1750T VCO
10k
10k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
FREQUENCY (Hz)
100k
100k
100k
CP
CP
CP
= 625µA, DSB
= 625µA, DSB
= 625µA, DSB
1M
1M
1M
10M
10M
10M
100M
100M
100M
Rev. D | Page 8 of 24
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–102
–104
–10
–15
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–25
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–35
–1
–2
–3
–4
–5
–6
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–92
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–98
–5
6
5
4
3
2
1
0
5
0
0
0
–60
Figure 9. Charge Pump Output Characteristics
0.5
–40
Figure 10. Phase Noise vs. Temperature
1
1.0
Figure 8. RF Input Sensitivity
–20
1.5
FREQUENCY (GHz)
TEMPERATURE (°C)
0
2
2.0
V
CP
(V)
20
2.5
3
P = 4/5
40
3.0
P = 8/9
3.5
60
4
4.0
80
4.5
5
100