MT47H32M16HR-3 IT:F TR Micron Technology Inc, MT47H32M16HR-3 IT:F TR Datasheet - Page 53
![DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R](/photos/31/34/313419/mfg557-84-fbga_sml.jpg)
MT47H32M16HR-3 IT:F TR
Manufacturer Part Number
MT47H32M16HR-3 IT:F TR
Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H32M16HR-3 IT:F TR
Density
512 Mb
Maximum Clock Rate
667 MHz
Package
84FBGA
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
0.45 ns
Operating Temperature
-40 to 85 °C
Organization
32Mx16
Address Bus
15b
Access Time (max)
450ps
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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AC Overshoot/Undershoot Specification
Table 26: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 27: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 20: Overshoot
Figure 21: Undershoot
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 26 and Table 27.
V
V
DD
V
SS
SS
/V
/V
/V
DDQ
SSQ
DD
DDQ
SSQ
SS
SSQ
(see Figure 20)
(see Figure 21)
(see Figure 20)
(see Figure 21)
Maximum amplitude
Maximum amplitude
53
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Undershoot area
Overshoot area
-25/-25E
0.66 Vns
0.66 Vns
-25/-25E
0.23 Vns
0.23 Vns
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
© 2004 Micron Technology, Inc. All rights reserved.
1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E
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