MT47H32M16HR-3 IT:F TR Micron Technology Inc, MT47H32M16HR-3 IT:F TR Datasheet - Page 27
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MT47H32M16HR-3 IT:F TR
Manufacturer Part Number
MT47H32M16HR-3 IT:F TR
Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H32M16HR-3 IT:F TR
Density
512 Mb
Maximum Clock Rate
667 MHz
Package
84FBGA
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
0.45 ns
Operating Temperature
-40 to 85 °C
Organization
32Mx16
Address Bus
15b
Access Time (max)
450ps
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Table 11: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Parameter/Condition
Operating one bank active-precharge
current:
t
HIGH between valid commands; address bus
inputs are switching; Data bus inputs are
switching
Operating one bank active-read-pre-
charge current: I
(I
t
is HIGH, CS# is HIGH between valid com-
mands; address bus inputs are switching; Da-
ta pattern is same as I
Precharge power-down current: All banks
idle;
trol and address bus inputs are stable; Data
bus inputs are floating
Precharge quiet standby current: All
banks idle;
HIGH; Other control and address bus inputs
are stable; Data bus inputs are floating
Precharge standby current: All banks idle;
t
er control and address bus inputs are switch-
ing; Data bus inputs are switching
Active power-down current: All banks
open;
trol and address bus inputs are stable; Data
bus inputs are floating
Active standby current: All banks open;
t
t
valid commands; Other control and address
bus inputs are switching; Data bus inputs are
switching
Operating burst write current: All banks
open, continuous burst writes; BL = 4, CL =
CL (I
MAX (I
HIGH between valid commands; address bus
inputs are switching; Data bus inputs are
switching
RAS =
RAS =
CK =
CK =
RP (I
DD
), AL = 0;
DD
t
DD
CK =
t
t
t
CK (I
CK (I
), AL = 0;
DD
t
t
CK =
); CKE is HIGH, CS# is HIGH between
RAS MIN (I
RAS MIN (I
),
t
CK =
t
DD
DD
t
CK (I
t
RP =
CK =
t
CK (I
t
); CKE is HIGH, CS# is HIGH; Oth-
),
CK =
t
t
CK (I
RAS =
DD
t
CK =
t
t
DD
RP (I
CK (I
OUT
DD
DD
); CKE is LOW; Other con-
t
DD
CK (I
); CKE is LOW; Other con-
DD
); CKE is HIGH, CS# is
),
DD4W
DD
t
= 0mA; BL = 4, CL = CL
DD
t
t
CK (I
),
Specifications and Conditions (Die Revision G)
RAS MAX (I
RCD =
DD
); CKE is HIGH, CS# is
t
); CKE is HIGH, CS# is
RC =
),
DD
t
RC =
),
t
t
RCD (I
RC (I
t
RAS =
t
DD
RC (I
DD
DD
),
),
t
t
); CKE
RAS
DD
RP =
),
Symbol
I
I
I
I
I
I
I
DD3Pf
DD3Ps
DD4W
I
I
DD2Q
DD2N
DD3N
DD2P
DD0
DD1
Configuration
Slow PDN exit
Fast PDN exit
27
x4, x8, x16
MR12 = 0
MR12 = 1
Electrical Specifications – I
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
x16
x16
x16
x16
x16
x16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
-25E/
125
160
-25
65
80
75
95
24
26
28
30
18
33
35
7
9
-3E/-3
115
135
60
75
70
90
22
24
25
27
15
30
32
7
9
© 2004 Micron Technology, Inc. All rights reserved.
-37E
120
55
70
65
85
20
22
23
25
14
27
29
99
7
9
DD
Parameters
105
-5E
55
70
65
85
19
20
21
23
13
24
26
85
7
9
Units
mA
mA
mA
mA
mA
mA
mA
mA