MT47H32M16HR-3 IT:F TR Micron Technology Inc, MT47H32M16HR-3 IT:F TR Datasheet - Page 43
![DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R](/photos/31/34/313419/mfg557-84-fbga_sml.jpg)
MT47H32M16HR-3 IT:F TR
Manufacturer Part Number
MT47H32M16HR-3 IT:F TR
Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H32M16HR-3 IT:F TR
Density
512 Mb
Maximum Clock Rate
667 MHz
Package
84FBGA
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
0.45 ns
Operating Temperature
-40 to 85 °C
Organization
32Mx16
Address Bus
15b
Access Time (max)
450ps
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Input Electrical Characteristics and Operating Conditions
Table 15: Input DC Logic Levels
All voltages are referenced to V
Table 16: Input AC Logic Levels
All voltages are referenced to V
Figure 11: Single-Ended Input Signal Levels
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Parameter
Input high (logic 1) voltage
Input low (logic 0) voltage
Parameter
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
Note:
Note:
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
1. V
1. Refer to AC Overshoot/Undershoot Specification (page 53).
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
SS
SS
DDQ
Input Electrical Characteristics and Operating Conditions
+ 300mV allowed provided 1.9V is not exceeded.
Symbol
V
V
IH(DC)
IL(DC)
43
Symbol
V
V
V
V
V
IH(AC)
IH(AC)
IL(AC)
IL(AC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
REF(DC)
–300
Min
512Mb: x4, x8, x16 DDR2 SDRAM
+ 125
V
V
REF(DC)
REF(DC)
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
–300
–300
Min
+ AC noise
+ DC error
- DC error
- AC noise
+ 250
+ 200
V
REF(DC)
© 2004 Micron Technology, Inc. All rights reserved.
V
Max
DDQ
V
V
REF(DC)
REF(DC)
- 125
1
V
V
Max
DDQ
DDQ
- 250
- 200
1
1
Units
mV
mV
Units
mV
mV
mV
mV
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