BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 9

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
BLF888
Product data sheet
Component
B1, B2
C1
C2, C9, C10
C3
C4, C5, C6
C7
C8, C13, C14
C11, C12
List of components
7.4 Reliability
Figure
Description
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Fig 11. BLF888 electromigration (I
12,
(10) T
(11) T
Figure 13
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
1
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
0
and
All information provided in this document is subject to legal disclaimers.
Figure
(10)
(11)
(7)
(8)
(9)
Rev. 5 — 21 January 2011
4
14.
Value
25 ; 49.5 mm
12 pF
10 pF
4.7 pF
8.2 pF
5.6 pF
100 pF
2.0 pF
8
DS(DC)
, total device)
(1)
(2)
(3)
(4)
(5)
(6)
12
[1]
[1]
[2]
[1]
[2]
[1]
[2]
16
Remarks
EZ90-25-TP
UHF power LDMOS transistor
20
I
DS(DC)
001aak649
© NXP B.V. 2011. All rights reserved.
BLF888
(A)
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