BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 3

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
6. Characteristics
Table 6.
T
[1]
[2]
Table 7.
T
BLF888
Product data sheet
Symbol
R
Symbol
V
V
I
I
I
g
R
C
C
C
Symbol
2-Tone, class AB
V
I
P
P
G

IMD3
DVB-T (8k OFDM)
V
I
P
G
DSS
DSX
GSS
Dq
Dq
j
h
fs
D
(BR)DSS
GS(th)
DS
L(PEP)
L(AV)
DS
L(AV)
th(j-c)
DS(on)
iss
oss
rss
p
p
= 25
= 25
R
I
Capacitance values without internal matching.
D
th(j-c)
is the drain current.


C unless otherwise specified.
C unless otherwise specified.
is measured under RF conditions.
Thermal characteristics
DC characteristics
RF characteristics
Parameter
thermal resistance from junction to case
third-order intermodulation distortion
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Parameter
drain-source voltage
quiescent drain current
peak envelope power load power
average output power
power gain
drain efficiency
drain-source voltage
quiescent drain current
average output power
power gain
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 21 January 2011
Conditions
V
V
V
V
V
V
V
V
V
V
Conditions
total device
total device
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 10 V; I
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
Conditions
T
DS
DS
DS
DS
D
D
= 2.7 mA
+ 3.75 V; V
+ 3.75 V; I
case
DS
= 270 mA
= 13.5 A
= 50 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 0 V
= 80 C; P
D
DS
= 9.5 A
= 10 V
L(AV)
= 110 W
UHF power LDMOS transistor
[1]
[1]
[1]
[1]
[2]
[2]
[2]
Min
104
1.4
-
-
-
-
-
-
-
-
Min
-
-
500
250
18
42
-
-
-
110
18
Typ
-
1.9
-
43
-
17
105
205
65
2.2
Typ
50
1.3
-
-
19
46
32
50
1.3
-
19
© NXP B.V. 2011. All rights reserved.
[1]
BLF888
Max
-
2.4
2.8
-
280
-
-
-
-
-
Max
-
-
-
-
-
-
28
-
-
-
-
Typ
0.24
Unit
V
V
A
A
nA
S
m
pF
pF
pF
Unit
V
A
W
W
dB
%
dBc
V
A
W
dB
Unit
K/W
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