BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 11

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

Fig 12. Class-AB common-source broadband amplifier; V
50 Ω
See
C36
C37
+V
+V
Table 9
C33
G1(test)
G2(test)
R7
R5
R3
R4
R6
R8
L33
for a list of components.
C34
C35
L32
B2
C32 C31
L31
L30
C30
D1(test)
, V
L5
D2(test)
C17
C18
C1
L1
C2
, V
C3
G1(test)
R1
C4
R2
C19
C20
C5
C11
C12
C6
and V
C7
C9
C10
G2(test)
L2
are drain and gate test voltages
B1
L3
C13
C14
L4
C15
C16
C8
C21
C22
+V
+V
001aak650
50 Ω
D1(test)
D2(test)