BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 11
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BLF888,112
Manufacturer Part Number
BLF888,112
Description
TRANSISTOR RF PWR LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888112.pdf
(17 pages)
Specifications of BLF888,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
19dB
Voltage - Rated
104V
Current - Test
1.3A
Voltage - Test
50V
Power - Output
250W
Package / Case
SOT979A
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
19@50VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
105(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
205@50VpF
Output Capacitance (typ)@vds
65@50VpF
Reverse Capacitance (typ)
2.2@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5102-5
934062101112
BLF888,112
934062101112
BLF888,112
Available stocks
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Part Number
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Fig 12. Class-AB common-source broadband amplifier; V
50 Ω
See
C36
C37
+V
+V
Table 9
C33
G1(test)
G2(test)
R7
R5
R3
R4
R6
R8
L33
for a list of components.
C34
C35
L32
B2
C32 C31
L31
L30
C30
D1(test)
, V
L5
D2(test)
C17
C18
C1
L1
C2
, V
C3
G1(test)
R1
C4
R2
C19
C20
C5
C11
C12
C6
and V
C7
C9
C10
G2(test)
L2
are drain and gate test voltages
B1
L3
C13
C14
L4
C15
C16
C8
C21
C22
+V
+V
001aak650
50 Ω
D1(test)
D2(test)