BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 13

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
9. Package outline
Fig 15. Package outline SOT979A
BLF888
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
Unit
SOT979A
version
Outline
(1)
max
nom
max
nom
min
min
H
U
A
0.227
0.189
5.77
4.80
2
A
A
L
11.81
11.56
0.465
0.455
b
0.006
0.004
0.15
0.10
IEC
c
30.94
1.218
31.55
1.242
D
1
3
31.37
31.12
1.235
1.225
D
1
JEDEC
10.29
10.03
0.405
0.395
All information provided in this document is subject to legal disclaimers.
E
References
10.29
10.03
0.405
0.395
D
U
H
E
D
q
e
Rev. 5 — 21 January 2011
1
1
1
1
0
13.72
0.540
e
JEITA
scale
b
1.969
1.689
0.078
0.067
5
F
17.50
17.25
0.689
0.679
2
4
10 mm
H
25.53
25.27
1.005
0.995
H
w3
1
5
0.152
0.132
3.86
3.35
L
F
p
0.130
0.120
3.30
3.05
B
C
p
w2
w1
0.119
0.109
3.02
2.77
UHF power LDMOS transistor
Q
European
projection
C
A
35.56
1.400
q
B
E
41.28
41.02
1.625
1.615
1
U
1
© NXP B.V. 2011. All rights reserved.
Q
10.29
10.03
0.405
0.395
U
BLF888
2
Issue date
08-04-24
08-09-04
c
0.010
0.25
w
1
sot979a_po
E
SOT979A
0.010
0.020
0.25
0.51
w
w
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2