BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 13
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BLF888,112
Manufacturer Part Number
BLF888,112
Description
TRANSISTOR RF PWR LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888112.pdf
(17 pages)
Specifications of BLF888,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
19dB
Voltage - Rated
104V
Current - Test
1.3A
Voltage - Test
50V
Power - Output
250W
Package / Case
SOT979A
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
19@50VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
105(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
205@50VpF
Output Capacitance (typ)@vds
65@50VpF
Reverse Capacitance (typ)
2.2@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5102-5
934062101112
BLF888,112
934062101112
BLF888,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
9. Package outline
Fig 15. Package outline SOT979A
BLF888
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
Unit
SOT979A
version
Outline
(1)
max
nom
max
nom
min
min
H
U
A
0.227
0.189
5.77
4.80
2
A
A
L
11.81
11.56
0.465
0.455
b
0.006
0.004
0.15
0.10
IEC
c
30.94
1.218
31.55
1.242
D
1
3
31.37
31.12
1.235
1.225
D
1
JEDEC
10.29
10.03
0.405
0.395
All information provided in this document is subject to legal disclaimers.
E
References
10.29
10.03
0.405
0.395
D
U
H
E
D
q
e
Rev. 5 — 21 January 2011
1
1
1
1
0
13.72
0.540
e
JEITA
scale
b
1.969
1.689
0.078
0.067
5
F
17.50
17.25
0.689
0.679
2
4
10 mm
H
25.53
25.27
1.005
0.995
H
w3
1
5
0.152
0.132
3.86
3.35
L
F
p
0.130
0.120
3.30
3.05
B
C
p
w2
w1
0.119
0.109
3.02
2.77
UHF power LDMOS transistor
Q
European
projection
C
A
35.56
1.400
q
B
E
41.28
41.02
1.625
1.615
1
U
1
© NXP B.V. 2011. All rights reserved.
Q
10.29
10.03
0.405
0.395
U
BLF888
2
Issue date
08-04-24
08-09-04
c
0.010
0.25
w
1
sot979a_po
E
SOT979A
0.010
0.020
0.25
0.51
w
w
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