BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 12

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
BLF888
Product data sheet
Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier
Fig 14. Component layout for class-AB common source amplifier
mm
50
50 Ω
C33
C34
R3
See
See
L33
C36
C37
R4
Table 9
Table 9
C35
L32
L32
+V
+V
All information provided in this document is subject to legal disclaimers.
R5
G1(test)
G2(test)
C32
R6
for a list of components.
for a list of components.
Rev. 5 — 21 January 2011
C31
L31
L31
R7
R8
C30
L30
L30
C1
mm
6.5
C17
C18
L5
L5
9 mm
C2
105 mm
19.5 mm
2 mm
31.5 mm
C3
L1
L1
R1
C4
R2
C19
C20
C5 C6
UHF power LDMOS transistor
C12
+
−
−
+
C11
L2
L2
C22
C21
C7
C10
C9
+V
+V
D1(test)
D2(test)
© NXP B.V. 2011. All rights reserved.
BLF888
C13
C14
L3
L3
001aak652
C21
001aak651
L4
C15
C16
12 of 17
C8
50
Ω