BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BLF888,112
Manufacturer Part Number
BLF888,112
Description
TRANSISTOR RF PWR LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888112.pdf
(17 pages)
Specifications of BLF888,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
19dB
Voltage - Rated
104V
Current - Test
1.3A
Voltage - Test
50V
Power - Output
250W
Package / Case
SOT979A
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
19@50VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
105(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
205@50VpF
Output Capacitance (typ)@vds
65@50VpF
Reverse Capacitance (typ)
2.2@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5102-5
934062101112
BLF888,112
934062101112
BLF888,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
Table 7.
T
[1]
[2]
BLF888
Product data sheet
Symbol
IMD
PAR
h
D
= 25
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
shldr
C unless otherwise specified.
RF characteristics
Parameter
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
6.1 Ruggedness in class-AB operation
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
power. Ruggedness is measured in the application circuit as described in
Fig 1.
…continued
V
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
GS
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
oss
Rev. 5 — 21 January 2011
250
200
150
100
50
0
Conditions
20
40
DS
V
= 50 V; f = 860 MHz at rated
DS
001aaj274
(V)
UHF power LDMOS transistor
[1]
[2]
60
Min
28
-
-
Typ
31
31
8.3
© NXP B.V. 2011. All rights reserved.
BLF888
Section
Max
-
28
-
8.
Unit
%
dBc
dB
4 of 17