BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 5

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
7. Application information
BLF888
Product data sheet
Fig 2.
(dB)
G
p
22
20
18
16
14
12
10
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
DS
= 50 V; I
7.1.1 2-Tone
η
G
D
p
7.1 Narrowband RF figures
100
Dq
= 1.3 A; measured in a common source
200
300
All information provided in this document is subject to legal disclaimers.
P
001aak641
L
(W)
400
Rev. 5 — 21 January 2011
60
50
40
30
20
10
0
(%)
η
D
Fig 3.
(dB)
G
p
22
20
18
16
14
12
10
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
DS
= 50 V; I
IMD3
G
p
100
Dq
= 1.3 A; measured in a common source
UHF power LDMOS transistor
200
300
© NXP B.V. 2011. All rights reserved.
P
001aak642
BLF888
L
(W)
400
0
−10
−20
−30
−40
−50
−60
(dBc)
IMD3
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