BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 10

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
Table 9.
For test circuit, see
[1]
[2]
[3]
[4]
BLF888
Product data sheet
Component
C15, C16
C17, C18
C19, C20
C21, C22
C30, C31
C32
C33, C34, C35
C36, C37
L1
L2
L3, L32
L4
L5
L30
L31
L33
R1, R2
R3, R4
R5, R6
R7, R8
American technical ceramics type 180R or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
Printed-Circuit Board (PCB): Taconic RF35; 
thickness copper plating = 35 m.
List of components
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
resistor
resistor
resistor
potentiometer
12,
Figure 13
…continued
and
All information provided in this document is subject to legal disclaimers.
r
Figure
= 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization);
Rev. 5 — 21 January 2011
14.
Value
4.7 F, 50 V
100 pF
10 F, 50 V
470 F; 63 V
10 pF
5.6 pF
100 pF
4.7 F
-
-
-
-
-
-
-
-
10 
5.6 
100 
1 k
[2]
[3]
[3]
[3]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Remarks
TDK C4532X7R1E475MT020U or
capacitor of same quality.
TDK C570X7R1H106KT000N or
capacitor of same quality.
TDK C4532X7R1E475MT020U or
capacitor of same quality.
(W  L) 15 mm  13 mm
(W  L) 5 mm  26 mm
(W  L) 2 mm  49.5 mm
(W  L) 1.7 mm 3.5 mm
(W  L) 2 mm  9.5 mm
(W  L) 5 mm  13 mm
(W  L) 2 mm  11 mm
(W  L) 2 mm  3 mm
UHF power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
BLF888
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