FDFS6N303 Fairchild Semiconductor, FDFS6N303 Datasheet - Page 4

• Manufacturer Part Number: FDFS6N303
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDFS6N303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS6N303TR; FDFS6N303_NL; FDFS6N303_NLTR; FDFS6N303_NLTR

Typical
10
8
6
4
2
0
0
0.1
Figure 7. Gate Charge Characteristics.
10
Figure 9. Schottky Diode Forward Voltage.
1
0
I
D
0.005
0.002
0.001
= 6.0A
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
2
1
Fet
0.1
D = 0.5
4
0.2
V , FORWARD VOLTAGE (V)
T = 125°C
Q
And
F
J
0.2
0.1
g
, GATE CHARGE (nC)
0.05
Figure 11. Transient Thermal Response Curve.
0.02
6
0.001
0.01
25°C
V
0.3
Schottky
DS
Single Pulse
= 5V
8
Transient thermal response will change depending on the circuit board design.
15V
Thermal characterization performed using the conditions described in note 1c.
0.4
10
0.01
0.5
Electrical
10V
12
0.6
14
0.1
t , TIME (sec)
1
Characteristics
1000
500
200
100
50
0.1
Figure 10. Schottky Diode Reverse Current.
0.00001
Figure 8. Capacitance Characteristics.
0.0001
0.001
0.01
0.1
f = 1 MHz
V
1
GS
1
0
= 0V
0.3
V
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
V , REVERSE VOLTAGE (V)
R
10
1
P(pk)
10
T - T
T = 125°C
Duty Cycle, D = t /t
J
R
J
25°C
R
JA
t
15
1
A
JA
(t) = r(t) * R
t
= P * R
3
2
=135° C/W
20
JA
1
100
(t)
2
JA
FDFS6N303 Rev. D3
10
C iss
C oss
C rss
25
300
30
30