FDFS6N303 Fairchild Semiconductor, FDFS6N303 Datasheet - Page 2

• Manufacturer Part Number: FDFS6N303
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDFS6N303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS6N303TR; FDFS6N303_NL; FDFS6N303_NLTR; FDFS6N303_NLTR

Electrical Characteristics
MOSFET ELECTRICAL CHARACTERISTICS
Symbol
BV
I
I
I
V
R
g
I
C
C
C
Q
t
t
t
t
MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
SCHOTTKY DIODE CHARACTERISTICS
B
I
V
THERMAL CHARACTERISTICS
R
R
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
R
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FS
GS(th)
DS(ON)
iss
oss
rss
SD
V
F
g
Scale 1 : 1 on letter size paper
JA
JC
DSS
guaranteed by design while R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
On-State Drain Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Breakdown Voltage
Reverse Leakage
Forward Voltage
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
CA
is determined by the user's board design.
a. 78
(T
pad of 2oz copper.
A
O
= 25
C/W on a 0.5 in
o
C unless otherwise noted )
2
Conditions
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
I
V
I
I
I
R
F
F
F
GS
DS
GS
GS
DS
GS
GS
DS
GS
DS
DS
DD
GS
GS
R
= 0.1 A
= 3 A
= 6 A
= 1 mA
= 30 V
= 24 V, V
= V
= 10 V, I
= 15 V, V
= 15 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V, I
= 4.5 V, R
= 0 V, I
GS
, I
D
D
D
S
D
D
= 250 µA
= 1.3 A
= 250 µA
D
GS
GS
= 6 A, V
DS
DS
D
= 6 A
= 1 A,
DS
GEN
= 6 A
= 4.8 A
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V,
b. 125
= 6
pad of 2oz copper.
GS
(Note 1)
O
(Note 1a)
C/W on a 0.02 in
= 10 V
(Note 2)
T
J
=125°C
2
Min
30
15
30
1
0.025
0.043
Typ
350
220
1.7
7.5
0.8
12
80
12
12
13
78
40
6
c. 135
pad of 2oz copper.
O
0.035
-100
0.055
Max
C/W on a 0.003 in
100
280
420
500
1.3
1.2
0.5
20
17
15
25
25
15
FDFS6N303 Rev. D3
1
3
Units
°C/W
°C/W
mA
mV
µA
µA
nA
nA
nC
ns
ns
ns
ns
V
V
S
A
pF
pF
pF
A
V
V
JC
2
is