FDFS6N303 Fairchild Semiconductor, FDFS6N303 Datasheet
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FDFS6N303
Specifications of FDFS6N303
FDFS6N303_NL
FDFS6N303_NLTR
FDFS6N303_NLTR
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Related parts for FDFS6N303
FDFS6N303 Summary of contents
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... FDFS6N303 N-Channel MOSFET with Schottky Diode General Description The FDFS6N303 incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general pur- pose pinout has been chosen to maximize flexibility and ease of use ...
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... C 0.02 in pad of 2oz copper. Min Typ Max =125° 100 -100 1 1.7 3 0.025 0.035 0.043 0.055 12 15 350 220 7 1.3 0.8 1.2 (Note 2) 30 0.5 280 420 500 135 C 0.003 in 2 pad of 2oz copper. FDFS6N303 Rev. D3 Units V µA µ °C/W °C ...
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... DRAIN CURRENT (A) D Drain Current and Gate Voltage 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDFS6N303 Rev 1.2 1.4 ...
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... Figure 8. Capacitance Characteristics. 1 0.1 0.01 0.001 0.0001 0.00001 0.5 0.6 0 Figure 10. Schottky Diode Reverse Current. 0.01 0 TIME (sec iss C oss C rss = 0V 0 DRAIN TO SOURCE VOLTAGE ( 125°C J 25° REVERSE VOLTAGE ( ( =135° C/W JA P(pk ( Duty Cycle 100 300 FDFS6N303 Rev ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...