FDFS6N303 Fairchild Semiconductor, FDFS6N303 Datasheet - Page 3

• Manufacturer Part Number: FDFS6N303
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDFS6N303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS6N303TR; FDFS6N303_NL; FDFS6N303_NLTR; FDFS6N303_NLTR

Typical Electrical Characteristics
30
25
20
15
10
30
25
20
15
10
5
0
5
0
Figure 1. On-Region Characteristics.
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
Figure 5. Transfer Characteristics.
1
1
V
-50
DS
V
= 5V
I = 6A
D
GS
V
GS
-25
= 10V
2
= 10V
V
V
1
DS
Temperature.
GS
, DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
0
6.0V
, GATE TO SOURCE VOLTAGE (V)
J
3
5.0V
25
2
T = -55°C
A
4.5V
4
50
75
4.0V
5
125°C
3
3.5V
100
25°C
3.0V
6
125
4
150
7
0.0001
0.075
0.025
0.001
0.05
2.5
1.5
0.5
0.01
0.1
3
2
1
0.1
0
30
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Figure 6. Body Diode Forward Voltage
0
1
2
0
V
V
GS
GS
= 4.0V
= 0V
0.2
5
V
SD
V
Variation with Source Current
Drain Current and Gate Voltage.
GS
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
and Temperature.
4
0.4
, GATE TO SOURCE VOLTAGE (V)
4.5V
T = 125°C
I
10
A
D
, DRAIN CURRENT (A)
5.0V
0.6
25°C
15
6.0V
6
-55°C
0.8
T = 125°C
A
7.0V
20
25°C
1
8
10V
FDFS6N303 Rev. D3
25
I = 3A
D
1.2
30
1.4
10