RFP30P06 Fairchild Semiconductor, RFP30P06 Datasheet - Page 7

• Manufacturer Part Number: RFP30P06
• Description: MOSFET P-CH 60V 30A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP30P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 20V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT RFP30P06 2 1 3;
REV 8/21/94
CA 12 8 3.23e-9
CB 15 14 3.23e-9
CIN 6 8 3.08e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -77.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 4.60e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 39.85e-3
RGATE 9 20 2.34
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 2.56e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.81
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))}
.MODEL DBDMOD D (IS=4.7e-13 RS=1.31e-2 TRS1=1.39e-4 TRS2=-4.77e-6 CJO=2.85e-9 TT=8.81e-8)
.MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5)
.MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5)
.MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7)
.MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature
Options; authors, William J. Hepp and C. Frank Wheatley.
GATE
1
LGATE RGATE
9
20
12
DPLCAP
+
S1A
CA
S1B
EVTO
18
8
EGS
13
-
8
10
+
-
RIN
14
13
6
8
6
RSCL2
13
S2A
S2B
-
-
VTO
ESG
15
EDS
8
6
CIN
CB
+
+
16
-
+
6
8
51
5
14
5
+
MOS1
50
RDRAIN
51
RSCL1
21
ESCL
8
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
RSOURCE
MOS2
EBREAK
DBREAK
17
11
17
18
+
RBREAK
-
IT
7
LSOURCE
LDRAIN
DBODY
18
19
+
RVTO
VBAT
SOURCE
DRAIN
2
3