RFP30P06 Fairchild Semiconductor, RFP30P06 Datasheet - Page 5

• Manufacturer Part Number: RFP30P06
• Description: MOSFET P-CH 60V 30A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP30P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 20V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuits and Waveforms
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VARY t
REQUIRED PEAK I
V
1000
3000
2000
GS
4000
0V
V
GS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
0
P
0
FIGURE 16. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
t
P
V
AS
-5
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
OSS
RSS
ISS
V
GS
-10
R
R
G
GS
-15
V
DS
V
C
C
C
V
I
Unless Otherwise Specified (Continued)
GS
AS
ISS
RSS
OSS
DS
DUT
= 0V, f = 1MHz
DUT
= C
= C
≈
0.01Ω
R
L
-20
L
C
GS
GD
DS
+ C
+ C
-
+
GD
-
+
V
GS
V
DD
DD
-25
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
0
0
0
V
V
-60
-45
-30
-15
DS
GS
0
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
V
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
DD
t
d(ON)
10%
V
20
CONSTANT GATE CURRENT
DD
t
50%
I
I
ON
G(ACT)
G(REF)
= BV
DRAIN SOURCE VOLTAGE
t
90%
r
DSS
I
AS
I
G(REF)
10%
PULSE WIDTH
0.75 BV
0.50 BV
0.25 BV
t
V
VOLTAGE
t, TIME (µs)
P
SOURCE
R
GS
L
GATE
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
= 2.0Ω
= -10V
= -1.6mA
DSS
DSS
DSS
BV
t
AV
DSS
V
DD
80
= BV
I
I
G(ACT)
G(REF)
t
d(OFF)
DSS
V
90%
DS
t
50%
OFF
90%
t
10%
f
-10
-7.5
-5
-2.5
0