RFP30P06 Fairchild Semiconductor, RFP30P06 Datasheet - Page 2

• Manufacturer Part Number: RFP30P06
• Description: MOSFET P-CH 60V 30A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP30P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 20V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
1. T
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C.
GS
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
C, Unless Otherwise Specified
SYMBOL
V
Q
r
BV
t
Q
Q
DS(ON)
t
d(OFF)
t
C
C
GS(TH)
R
I
I
t
d(ON)
C
R
(OFF)
g(TOT)
DSS
GSS
(ON)
g(-10)
V
g(TH)
t
OSS
RSS
θ JC
ISS
θ JA
RR
t
DSS
t
SD
r
f
I
V
V
V
V
I
V
R
(Figure 13)
V
V
V
V
(Figure 12)
TO-220, TO-263
TO-247
I
I
D
D
SD
SD
GS
DS
DS
GS
DD
GS
GS
GS
DS
G
= 250 µ A, V
= -30A, V
= 6.25 Ω
= -30A
= -30A, dI
= -60V, V
= 0.8 x Rated BV
= 25V, V
= V
= ± 20V
= -30V, I
= 0 to -20V
= 0 to -10V
= 0 to -2V
DS
TEST CONDITIONS
, I
GS
D
D
GS
TEST CONDITIONS
GS
SD
GS
= 250 µ A
= -10V (Figure 9)
= 15A, R
J,
/dt = -100A/ µ s
= 0V, f = 1MHz
= 0V
= 0V
T
DGR
DSS
STG
V
R
I
G(REF)
pkg
DM
GS
AS
DD
L
DSS
D
D
L
= 1.6 Ω,
L
= -48V, I
, T
= 2.00 Ω , V
= 1.6mA
C
Refer to Peak Current Curve
= 150
RFG30P06, RFP30P06
D
Refer to UIS Curve
= 30A,
o
RF1S30P06SM
GS
C
-55 to 175
= -10V
± 20
135
300
260
-60
-60
0.9
30
MIN
-
-
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
MIN
-60
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
3200
TYP
140
800
175
5.5
15
23
28
18
70
-
-
-
-
-
-
-
-
-
-
MAX
-1.5
150
0.065
MAX
± 100
1.11
100
170
-25
6.6
80
85
62
30
-4
-1
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
V
V
A
C
C
C
o
UNITS
MAX
C
o
o
o
ns
C/W
C/W
C/W
nC
nC
nC
V
µ A
µ A
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
Ω
V
V