RFP30P06 Fairchild Semiconductor, RFP30P06 Datasheet - Page 3

• Manufacturer Part Number: RFP30P06
• Description: MOSFET P-CH 60V 30A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP30P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 20V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
-200
-100
1.2
1.0
0.8
0.6
0.4
0.2
-10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-1
0
0 0
-1
0.01
0.1
2
1
10
TEMPERATURE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
25
-5
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
C
50
, CASE TEMPERATURE (
SINGLE PULSE
DS(ON)
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
-10
T
T
100
J
C
= MAX RATED
= 25
o
Unless Otherwise Specified
C
125
o
C)
10
-3
150
t, RECTANGULAR PULSE DURATION (s)
100µs
100ms
10ms
1ms
DC
-100
175
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
-500
-100
-40
-30
-20
-10
-10
0
10
25
-5
V
GS
FIGURE 5. PEAK CURRENT CAPABILITY
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
= -20V
CASE TEMPERATURE
10
V
GS
50
-4
10
= -10V
-1
T
C
, CASE TEMPERATURE (
10
75
NOTES:
DUTY FACTOR: D = t
PEAK T
-3
t, PULSE WIDTH (s)
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
FOR TEMPERATURES ABOVE 25
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
J
= P
10
100
I
=
-2
DM
10
P
I 25
DM
0
x Z



θJC
10
125
175
---------------------
1
-1
/t
t
t
o
150
2
x R
1
2
C)
–
T C
θJC



10
150
+ T
T
0
C
C
= 25
10
o
C
1
o
C
175
10
1