NDC652P Fairchild Semiconductor, NDC652P Datasheet - Page 6

• Manufacturer Part Number: NDC652P
• Description: MOSFET P-CH 30V 2.4A SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC652P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC652PTR

Typical Electrical and ThermalCharacteristics
0.005
8
6
4
2
0
Figure 13. Transconductance Variation with Drain
2.5
1.5
0.05
0.02
0.01
0
3
2
1
0.5
0.2
0.1
0.00001
Figure 15. Maximum Steady-State Drain Current
0
1
V
1c
DS
1 b
Current and Temperature
= -10V
versus Copper Mounting Pad Area.
D = 0.5
-2
0.2
0.2
0.1
2oz COPPER MOUNTING PAD AREA (in
0.05
0.02
0.01
0.0001
I
Single Pulse
D
Figure 17. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
, DRAIN CURRENT (A)
-4
0.4
depending on the circuit board design.
T = -55°C
J
-6
0.6
0.001
4.5"x5" FR-4 Board
T
Still Air
V
25°C
A
G S
= 2 5 C
= - 4 . 5 V
125°C
-8
2
0.8
o
)
0.01
1a
-10
1
t , TIME (sec)
(continued)
1
0.03
0.01
Figure 14. SOT-6 Maximum Steady-State Power
0.3
0.1
1.5
0.5
3 0
1 0
3
1
2
1
0
0.1
0.1
0
Figure 16. Maximum Safe Operating Area
1c
1 b
Dissipation versus Copper Mounting Pad Area.
R
.
0.2
SINGLE PULSE
J A
V
T
= See Note 1c
A
GS
0.2
2oz COPPER MOUNTING PAD AREA (in
= 25°C
= -4.5V
-V
0.5
DS
1
, DRAIN-SOURCE VOLTAGE (V)
1
0.4
P(pk)
2
T - T
Duty Cycle, D = t
R
J
R
JA
0.6
10
t
1
A
JA
5
(t) = r(t) * R
t
= P * R
2
= See Note 1c
1 0
4.5"x5" FR-4 Board
T
Still Air
A
= 2 5 C
2
0.8
JA
1
)
o
/ t
JA
(t)
2
100
3 0
NDC652P Rev. D1
5 0
1a
1
300