NDC652P Fairchild Semiconductor, NDC652P Datasheet - Page 4

• Manufacturer Part Number: NDC652P
• Description: MOSFET P-CH 30V 2.4A SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC652P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC652PTR

Typical Electrical Characteristics
-10
- 1 0
-8
-6
-4
-2
-8
-6
-4
-2
0
0
1.6
1.4
1.2
0.8
0.6
-1
0
1
-50
V
Figure 1. On-Region Characteristics
DS
Figure 5. Transfer Characteristics
V
Figure 3. On-Resistance Variation
G S
V
= - 10V
I
D
GS
-25
-0.5
= -2.4A
= - 1 0 V
-2
= -4.5V
V
V
GS
D S
0
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
with Temperature
, DRAIN-SOURCE VOLTAGE (V)
J
-7.0
-1
-3
-6.0
25
T
-5.5
J
-1.5
= -55°C
50
-5.0
-4
-4.5
75
-2
-4.0
125°C
100
25°C
-5
-2.5
-3.5
-3.0
125
-2.5
-6
-3
150
2.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
2
1
2.5
1.5
0.5
1
0
-50
2
1
0
V
with Drain Current and Gate Voltage
with Drain Current and Temperature
Figure 6. Gate Threshold Variation
GS
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
= -3.0V
-25
V
GS
-2
= -4.5 V
-2
with Temperature
0
T , JUNCTION TEMPERATURE (°C)
J
I
-3.5
D
T
I , DRAIN CURRENT (A)
, DRAIN CURRENT (A)
J
D
2 5
-4
= 125°C
-4
5 0
-4.0
25°C
-6
-6
7 5
-55°C
V
-4.5
I
1 0 0
D
DS
-8
= -250µA
-5.0
= V
-8
-5.5
1 2 5
-6.0
GS
-7.0
NDC652P Rev. D1
-10
-10
1 5 0
-10