NDC652P Fairchild Semiconductor, NDC652P Datasheet - Page 5

• Manufacturer Part Number: NDC652P
• Description: MOSFET P-CH 30V 2.4A SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC652P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC652PTR

Typical Electrical Characteristics
V
1 0 0 0
5 0 0
2 0 0
1 0 0
GS
5 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
Figure 9. Capacitance Characteristics
0.1
1.1
1
-50
Figure 7. Breakdown Voltage Variation
Figure 11. Switching Test Circuit
I
D
f = 1 MHz
V
0.2
R
GS
= -250µA
-25
GEN
= 0 V
-V
DS
T
0.5
0
J
, DRAIN TO SOURCE VOLTAGE (V)
with Temperature
V
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
2
-V
D
S
DD
7 5
R
5
L
1 0 0
(continued)
D U T
1 0
1 2 5
C oss
C iss
C rss
V
O U T
1 5 0
3 0
V
Figure 8. Body Diode Forward Voltage Variation with
V
t
0.001
1 0
OUT
0.01
d(on)
8
6
4
2
0
IN
0.1
Figure 10. Gate Charge Characteristics
1 0
0
5
1
0.2
1 0 %
I
D
V
G S
Figure 12. Switching Waveforms
= -2.4A
= 0V
2
-V
T
0.4
t
J
SD
5 0 %
o n
1 0 %
= 125°C
, BODY DIODE FORWARD VOLTAGE (V)
Q
4
Source Current and Temperature
t
9 0 %
PULSE WIDTH
g
r
0.6
, GATE CHARGE (nC)
6
25°C
V
t
d(off)
DS
0.8
= -5V
8
5 0 %
-55°C
1
9 0 %
-10V
t
1 0 %
off
-15V
1 0
9 0 %
NDC652P Rev. D1
1.2
INVERTED
t
f
1 2