BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9504-40A,127
• Description: MOSFET N-CH 40V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9504-40A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 128nC @ 5V
• Input Capacitance (ciss) @ Vds: 8260pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056692127; BUK9504-40A; BUK9504-40A

Philips Semiconductors
9397 750 08649
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
DS
GS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
(A)
100
80
60
40
20
0
0
T j = 175 ºC
1
2
T j = 25 ºC
I S
(A)
100
3
80
60
40
20
0
V GS (V)
0.0
Rev. 01 — 24 October 2001
4
0.2
T j = 175 ºC
0.4
Fig 14. Gate-source voltage as a function of turn-on
0.6
T
j
= 25 C; I
T j = 25 ºC
0.8
gate charge; typical values.
V GS
(V)
V SD (V)
03nd90
5
4
3
2
1
0
BUK95/96/9E04-40A
0
1.0
D
= 25 A
20
V DD = 14 V
40
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
60
80
V DD = 32 V
100
120
Q G (nC)
140
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