BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet - Page 7

MOSFET N-CH 40V 75A SOT78

BUK9504-40A,127

Manufacturer Part Number
BUK9504-40A,127
Description
MOSFET N-CH 40V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9504-40A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
128nC @ 5V
Input Capacitance (ciss) @ Vds
8260pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056692127
BUK9504-40A
BUK9504-40A
Philips Semiconductors
9397 750 08649
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
V GS(th)
j
= 1 mA; V
= 25 C; V
(V)
junction temperature.
drain current; typical values.
2.5
1.5
0.5
g fs
2
1
0
(S)
-60
100
80
60
40
20
0
0
DS
DS
= V
= 25 V
0
GS
20
max
typ
min
60
40
120
60
T j (
o
I D (A)
03aa33
C)
180
Rev. 01 — 24 October 2001
80
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C (pF)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
gate-source voltage.
as a function of drain-source voltage; typical
values.
I D
= 0 V; f = 1 MHz
14000
12000
10000
8000
6000
4000
2000
0
0
BUK95/96/9E04-40A
10 -2
DS
0.5
= V
GS
10 -1
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
1.5
typ
1
2
max
2.5
10
V GS (V)
V DS (V)
03aa36
3
10 2
Ciss
Coss
Crss
7 of 15

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