BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet - Page 11

• Manufacturer Part Number: BUK9504-40A,127
• Description: MOSFET N-CH 40V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9504-40A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 128nC @ 5V
• Input Capacitance (ciss) @ Vds: 8260pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056692127; BUK9504-40A; BUK9504-40A

Philips Semiconductors
Fig 18. SOT226 (I
9397 750 08649
Product data
Plastic single-ended package; low-profile 3 lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT226
4.5
4.1
A
2
1.40
1.27
-PAK).
A 1
0.9
0.7
b
IEC
D
L
1.3
1.0
b 1
D 1
L 2
b 1
0.7
0.4
3-lead TO-220AB
c
low-profile
JEDEC
1
e
9.65
8.65
D
E
REFERENCES
2
Rev. 01 — 24 October 2001
e
D 1
1.5
1.1
0
3
b
10.3
9.7
E
L 1
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
BUK95/96/9E04-40A
L 1
L 2
max
3.0
Q
(1)
A
A 1
PROJECTION
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2.6
2.2
c
EUROPEAN
Q
ISSUE DATE
99-05-27
99-09-13
SOT226
11 of 15