BUK9504-40A,127 NXP Semiconductors, BUK9504-40A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9504-40A,127
• Description: MOSFET N-CH 40V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9504-40A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 128nC @ 5V
• Input Capacitance (ciss) @ Vds: 8260pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056692127; BUK9504-40A; BUK9504-40A

Philips Semiconductors
9397 750 08649
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
P der
(%)
der
mb
function of mounting base temperature.
120
100
80
60
40
20
= 25 C; I
0
=
0
---------------------- -
P
tot 25 C
P
25
I D
tot
(A)
10 2
10 3
10
DM
1
1
50
single pulse.
Capped at 75 A due to package
100%
75
100
R DSon = V DS / I D
125
150
T mb (ºC)
175
03na19
200
Rev. 01 — 24 October 2001
DC
10
Fig 2. Continuous drain current as a function of
V
I
der
GS
I D
(A)
mounting base temperature.
200
150
100
50
=
0
4.5 V
25
-------------------
I
D 25 C
Capped at 75 A due to package
BUK95/96/9E04-40A
I
D
50
V DS (V)
75
100%
100
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
125
03ne68
150
10 2
175
T mb (ºC)
200
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